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  • MnO2 二氧化錳晶體2

    MnO2 is 2D catalytic and electronic grade semiconducting 2D material. In the bulk form, MnO2 has 1.5 eV predicted band gap while it has been anticipated to increase to 2.0 eV in the monolayer form [1]

    更新時間:2024-06-03
    產品價格:5712.2
    廠商性質:生產廠家
    訪問次數:809
  • MnO2 二氧化錳晶體

    MnO2 is 2D catalytic and electronic grade semiconducting 2D material. In the bulk form, MnO2 has 1.5 eV predicted band gap while it has been anticipated to increase to 2.0 eV in the monolayer form [1]

    更新時間:2024-06-03
    產品價格:5712.2
    廠商性質:生產廠家
    訪問次數:847
  • MoO3 三氧化鉬晶體

    a-MoO3 is a layered vdW semiconductor with a crystal structure that belongs to the space group Pbnm 62 (see unit cell parameters below).

    更新時間:2024-06-03
    產品價格:6481.15
    廠商性質:生產廠家
    訪問次數:757
  • GeP 磷化鍺晶體

    GeP has highly anisotropic dispersions of band structures, with a layer-dependent indirect band gap from (theoretically predicted) 1.68 eV of monolayer to 0.51 eV of bulk.

    更新時間:2024-06-03
    產品價格:8678.15
    廠商性質:生產廠家
    訪問次數:760
  • GeAs 砷化鍺晶體

    Our single crystal GeAs (Germanium arsenide) crystals come with guaranteed anisotropy, electronic, and optical grade crystal quality. They are developed at our facilities using

    更新時間:2024-06-03
    產品價格:7579.65
    廠商性質:生產廠家
    訪問次數:707
  • SbSI 硅化銻晶體

    Commercially available first ferroelectric semiconductor SbSI 1D and 2D vdW crystals. Bulk V-VI-VII semiconductor has a orthorhombic structure with the space group of Pna21

    更新時間:2024-06-03
    產品價格:5712.2
    廠商性質:生產廠家
    訪問次數:748
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